Electronic defect states in a n-type conducting zinc oxide thin film sample were investigated by means of space charge spectroscopy focussing on levels in the midgap region as well as on hole traps. To overcome the experimental difficulties arising from the wide bandgap and the lack of p-type conduction, optical excitation was employed to measure the emission of trapped charge carriers from these levels. Therefore - besides deep-level transient spectroscopy measurements - photo-capacitance, optically chopped photo-current, minority carrier transient spectroscopy, and optical capacitance-voltage experiments were conducted. In doing so, a midgap level labelled T4, and hole traps labelled TH1 and TH2 were detected. In the case of T4 and TH1 the photo-ionisation cross-section spectra were determined. (C) 2012 Elsevier Ltd. All rights reserved.