A single electron bipolar avalanche transistor implemented in 90 nm CMOS

Webster EAG; Richardson JA; Grant LA; Henderson RK

Solid-State Electronics, Vol.76, 116-118, 2012

DOI10.1016/j.sse.2012.05.002 Export Citation

A single electron bipolar avalanche transistor implemented in 90 nm CMOS

Webster EAG, Richardson JA, Grant LA, Henderson RK

A Single Electron Bipolar Avalanche Transistor (SEBAT) with attoampere sensitivity and approximate to 10 Hz off-count rate is successfully integrated into 90 nm CMOS. The reported SEBAT has 120 dB (10 Hz-10 MHz) dynamic range corresponding to 0-0.35 V-BE, and an I-E approximate to 10(-18)-10(-12) A. Single-transistor ADC operation of the SEBAT is demonstrated by AC-coupling signals into the base. (C) 2012 Elsevier Ltd. All rights reserved.

Keywords:Avalanche bipolar transistors;Single electron bipolar avalanche transistors;CMOS;Avalanche;Bipolar junction transistors;Geiger-mode avalanche