CoInGaAs, a new self-aligned silicide-like source/drain (S/D) metallic contact, was demonstrated on In0.53Ga0.47As n-MOSFET. Co reacts with In0.53Ga0.47As at temperatures as low as 350 degrees C, forming metallic material comprising regions rich in cobalt gallium and cobalt arsenide. The CoInGaAs formed exhibits Schottky characteristic on p-type In0.53Ga0.47As, and is thus suitable for S/D material. It also exhibits ohmic behavior on n-type In0.53Ga0.47As (doping concentration of similar to 5 x 10(19) cm(-3)) with contact resistance and specific contact resistivity of similar to 1.12 k Omega mu m and 6.25 x 10(-4) Omega cm(2), respectively. The integration of CoInGaAs as metallic S/D material in In0.53Ga0.47As n-MOSFET produces reasonably well-behaved output characteristics. (C) 2012 Elsevier Ltd. All rights reserved.