A semi-analytical model for evaluating the drain current in long channel n-type metal gate strained-Si MOSFET has been developed in this paper. An uniaxial compressive strain has been applied mechanically over the gate of the transistor. Depletion charge density, flat-band voltage and threshold voltage under the applied uniaxial compressive strain conditions have also been calculated. The flat-band voltage and the threshold voltage fall with the applied uniaxial compressive strain. There is a tremendous increase in the drain current under the applied strain. The drain current rises mainly due to the decrease in the optical band-gap of the silicon substrate material giving rise to the electron mobility due to decrease in the electron mass and the fall in the threshold voltage under the application of the strain. The results obtained for the drain current and the threshold voltage have also been compared with the reported experimental results. The modeled results match closely with reported results. (C) 2012 Published by Elsevier Ltd.