Hydride vapor phase epitaxy (HVPE) grown GaN was evaluated for high power Schottky diodes (SDs) because it contains much less carbon and grows much more rapidly than other typical growth methods. The results are encouraging for applications <1000 V in that breakdown voltages (V-B) near this value can be readily obtained with figures of merit (FOM) of approximate to 250 MW/cm(2) that most likely can be improved upon. The properties of the SDs, however, vary dramatically from point to point, and cannot be attributed solely to processing issues. It is much more likely this variation across the wafer can be attributed to material inhomogeneities such as dislocations and point defects. (C) 2012 Elsevier Ltd. All rights reserved.