화학공학소재연구정보센터
Solid-State Electronics, Vol.81, 32-34, 2013
Effects of geometry parameters of NTFET devices on the I-V measurements
In this work, we report the design and fabrication of field effect transistors based on single-mailed carbon nanotubes (NTFETs) with the study of different geometry parameters (distance between electrodes, number of electrodes and thickness of gold layer) on the device performance, i.e., through the extraction of resistance from the output chardcteristics (I-V measurements) of the fabricated NTFET devices. Therefore, the NTFET device type with lower resistance was selected (based on the study of different geometry parameters) due to its enhanced device performance and thus being preferable for possible sensing experiments. (C) 2013 Elsevier Ltd. All rights reserved.