The temperature dependence of the gate leakage current has been developed for Double Gate (DG) MOSFETs. This model is compared with experimental data measured in Trigate MOSFETs at various temperatures with SiON as a dielectric material and SiO2 as an interfacial layer. The gate leakage current measurements at different temperatures show two different transport mechanisms, direct tunneling (DT) gate leakage and Trap-Assisted-Tunneling (TAT) current. Our analysis based on leakage current measurements in the above threshold regime for different temperatures shows that the DT current is clearly dominant over the TAT, while the opposite happens below threshold. Our model is able to explain the gate tunneling current in terms of gate voltage for different temperatures. The results of the DT current in the strong inversion regime and TAT in the subthreshold regime show good agreement with temperature dependent measurements. (C) 2013 Elsevier Ltd. All rights reserved.