The origin of the low-frequency noise is investigated in n-channel fin-shaped field-effect transistors (FinFETs) in terms of the channel length and fin width. In long-channel and wide fin devices, the spectra are dominated by 1/f noise due to carrier number fluctuation, correlated with mobility fluctuations. In long-channel and narrow fin devices, the spectra are composed of both Wand excess generation-recombination (g-r) noise components. Analysis of the g-r noise parameters lead to the conclusion that the g-r noise originates from traps in the sidewall gate oxides and in a depletion region near the sidewall interfaces. In short-channel devices, the spectra show 1/f behavior in the weak inversion described by carrier number fluctuations and g-r noise component in the low drain current region, possibly originating from the source and drain contacts process. (C) 2013 Elsevier Ltd. All rights reserved.