In this paper we present the modeling of the main current transport mechanisms in Schottky barrier (Double-Gate) MOSFET devices. A detailed way of the two-dimensional modeling approach with further analyses of the primary current components is given. Afterwards, these analyses are the basis of the development of a fully 2D compact model, which is able to predict the current behavior in reasonable device structures. A comparison and verification with TCAD simulation and measurement data is done with the evolved model current equations. (C) 2013 Elsevier Ltd. All rights reserved.