In this paper, we propose an approximate solution to solve the two dimensional potential distribution in ultra-thin body junctionless double gate MOSFET (JL DG MOSFET) operating in the subthreshold regime. Basically, we solved the 2D-Poisson equation along the channel, while assuming a parabolic potential across the silicon thickness, which in turn leads to some explicit relationships of the subthreshold current, subthreshold slope (SS) and drain induced barrier lowering (DIBL). This approach has been assessed with Technology Computer Aided Design (TCAD) simulations, confirming that this represents an interesting solution for further implementation in generic JL DG MOSFETs compact models. (C) 2013 Elsevier Ltd. All rights reserved.