In this work, P-MOS transistors of advanced bulk technology integrating high K/metal gate and SiGe channel are considered. An exhaustive study of threshold voltage (Vt), current gain factor (beta), and drain-current (Id) mismatches with different Ge proportions in the channel is performed, in linear regime, for transistors with and without pocket implants. A comparison between channels with and without Germanium and with different proportions of Germanium is considered. A global improvement of P-MOS transistors electrical parameters mismatch is observed with the introduction of Ge in the channel. Some explanations for this improvement with the introduction of Ge are proposed. (C) 2013 Elsevier Ltd. All rights reserved.