This paper describes a simple nonvolatile memory cell with a poly-Si spacer floating gate for power management integrated circuit applications. The proposed memory cell is fabricated using a 0.35 mu m double-poly high-voltage CMOS process which includes PIP capacitor, LV (5 V), and HV (20 V) CMOS devices. The floating gates of the proposed cell are buried under a LDD spacer oxide; thus the unit cell can be scaled easily in the channel length direction. In addition, any extra photo masking step is not required for the proposed cell in the applied fabrication process. The proposed cell shows an acceptable threshold voltage window of up to 10(4) cycles and less than 2% threshold voltage shifts in an 85 degrees C retention test. (C) 2013 Elsevier Ltd. All rights reserved.