Through numerical simulations at 77 K, it is shown that Auger suppression has a twofold effect on the sensitivity of the LWIR p on n HgCdTe sensors by decreasing the dark current and increasing the photocurrent. It has been demonstrated that Auger mechanism behaves in recombination mode along the n-type absorber layer under illumination. On the other hand, Auger behaves as a generation mechanism throughout the device under dark conditions. It is also shown that the reduction in the photocurrent due the presence of the Auger process results from the partial loss in the density of the photogenerated carriers due to Auger recombination. (c) 2013 Elsevier Ltd. All rights reserved.