The scaling-trend of the current-drive of AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) with gate-length is studied with the application of a realistic steady-state drift transport characteristics and an approximate purely-saturating drift transport characteristics. Findings show that due to an overwhelming presence of a region of negative differential mobility in the transport characteristics of GaN, a scaling-trend different from the one observed in mainstream silicon MOSFETs should be expected for AlGaN/GaN HFETs. The role of improvement in Ohmic contact technology on this scaling trend is also investigated. (C) 2013 Elsevier Ltd. All rights reserved.