In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies f(T)/f(MAx) amounting to 150/160 GHz for n-type and 100/130 GHz for p-type, respectively. Minimal noise figure and associated gain NFmin/G(ass) of 0.57 dB/17.8 dB and 0.57 dB/17.0 dB are measured at 10 GHz for n- and p-MOSFETs, respectively. (C) 2013 Elsevier Ltd. All rights reserved.