We demonstrate for the first time the feasibility of split C-V measurements on as-fabricated SOI wafers using pseudo-MOSFET configuration. An adapted methodology to determine the effective mobility of electrons and holes by split C-V technique is proposed and validated through comparison with the effective mobility extracted from static measurements. The method has been applied to different SOI materials (thin and thick film/BOX, passivated and non-passivated surface). The frequency and substrate depletion effects and the role of probe pressure and spacing are discussed. The electron mobility can exceed 500 cm(2) V-1 s(-1) in thin SOI films with passivated surface. (C) 2013 Elsevier Ltd. All rights reserved.