A multilayer Ti/Al/TiN/Ti/Al/TiN/Ti/Al/TiN metallization scheme is applied as an ohmic contact to n-GaN (n = 10(17) cm (3)). After formation of the contact through RTP at 600 degrees C for 6 min in Ar flow a Ti2AlN layer is created at the interface to n-GaN and Ti/Al layers form AlTi. The specific contact resistance of the as-formed contact is 7.4 x 10(-4) Omega cm(2). The contact remains ohmic and morphologically unaltered for annealing at 300 degrees C, 400 degrees C and 500 degrees C in ambient air for 100 h each and its resistivity rises to around 1.1 x 10 (3) Omega cm(2). This stability on one hand can be attributed to Ti2AlN MAX phase presence at the interface which inhibits excessive decomposition of GaN and thus confines the reaction between n-GaN and the metallization, and on the other to the presence of several TiN films in the metallization scheme, which are known to be diffusion barriers. (C) 2014 Elsevier Ltd. All rights reserved.