Herein, analytical expressions are derived for the interface phonon modes of the dual-gate MOSFET system. These analytical results are essential for studies of phonon scattering in MOSFET structures which will affect the performance of the device. We consider selected cubic systems within the framework of macroscopic dielectric continuum model. A principal finding of this paper is that the normally-dominant and unwanted carrier scattering caused by interface phonon interactions can be strongly suppressed through the appropriate placement of the two gates. (C) 2014 Elsevier Ltd. All rights reserved.