We propose a novel Graphene FET (GFET) with two capacitively coupled field-controlling electrodes (FCEs) at the bottom of the ungated access regions between gate and source/drain. The FCEs could be independently biased to modulate sheet carrier concentration and thereby the resistance in the ungated regions. The reduction of source/drain access resistance results in increased cut off frequency compared to those of conventional GFETs with the same geometry. We studied the DC and improved RF characteristics of the proposed device using both analytical and numerical techniques and compared with the. baseline designs. (C) 2014 Elsevier Ltd. All rights reserved.