In this work, the use of the Z(2)-FET (Zero subthreshold swing and Zero impact ionization FET) for ElectroStatic Discharge (ESD) protections is demonstrated. The device, fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator technology, features an extremely sharp off-on switch and an adjustable triggering voltage (V-t1). The principle of operation, relying on the modulation of electron and hole injection barriers, is reviewed. The impact of process modules and design parameters on electrical characteristics is analyzed with TCAD simulations, showing that very low leakage current (I-leck) and triggering capability adapted to local protection schemes are achievable. Experimental results validate the possible use of this device as an ESD protection in the 28 nm FDSOI technology. (C) 2014 Elsevier Ltd. All rights reserved.