A thin, flexible monocrystalline germanium (c-Ge) heterojunction solar cell has been developed based on a novel kerfless exfoliation process and remote plasma-enhanced chemical vapor deposition (RPCVD) of hydrogenated amorphous silicon (a-Si:H). The performance of the exfoliated 50 mu m thick and bulk 500 mu m Ge heterojunction cells is compared in this paper. A superior conversion efficiency of 5.28% was achieved with the 50 mu m exfoliated Ge cell versus 1.78% for the bulk Ge cell, in agreement with simulation results. A record fill factor of 58.1% for an a-Si:H/c-Ge heterojunction cell was obtained with the exfoliated cell. Moreover, the conversion efficiency achieved with the 50 mu m exfoliated cell (without intrinsic a-Si:H passivation) is comparable to the best reported in literature with bulk Ge heterojunction cells and intrinsic a-S:H passivation. Published by Elsevier B.V.