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Solar Energy, Vol.78, No.1, 1-4, 2005
Measurement of silicon and GaAs/Ge solar cells ac parameters
The ac parameters (cell capacitance and cell resistance) of Silicon (Si) and Gallium Arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. The cell capacitance is calculated from the Open circuit voltage decay (OCVD) and the cell resistance from solar cell I-V characteristics measured under dark condition. It is observed that the solar cell capacitance increases whereas the cell resistance decreases with increase in temperature. (C) 2004 Elsevier Ltd. All rights reserved.