The n-CdIn2Se4/p-CdTe heterojunction solar cells have been fabricated by deposition of n-CdIn2Se4 thin films using spray pyrolysis on to p-CdTe. Current density-voltage and capacitance-voltage measurements were performed to determine the electrical properties of the structures. The capacitance-voltage behavior indicates an abrupt interface. The junction quality factor (n), series and shunt resistance (R-s and R-sh), fill factor (FF) and efficiency (eta) for the cell have been estimated. The device exhibit maximum fill factor (FF), power conversion efficiency (eta) of about 0.55% and 0.67%. (C) 2011 Elsevier Ltd. All rights reserved.