comparative study of texturing c-Si wafers using wet and dry processes has been performed in this work; our aim was to produce pyramid-like structures on c-Si surfaces with low reflectance values, employing any of both processes. For wet texturing solutions consisting of potassium hydroxide (KOH) or sodium hydroxide (NaOH), combined with deionized water (DI H2O) and isopropyl alcohol (IPA) were used, while for dry texturing sulfur hexafluoride/oxygen (SF6/O-2) plasmas in a standard Reactive Ion etching (RIE) were employed. Our results demonstrated that RIE texturing produces highly textured c-Si surfaces, with pyramid-like structures, providing even lower reflectance values than those obtained with wet processes, which are currently used in the solar cells manufacturing industry. (C) 2014 Elsevier Ltd. All rights reserved.