Zinc nitride films were deposited on Si(100) substrates at room temperature using RF-magnetron sputtering in pure N-2 and in Ar + N-2 atmospheres. Two active phonon modes (270.81 and 569.80 cm(-1)) are observed in Raman spectra for films deposited in Ar + N-2 atmosphere. Atomic force microscopy showed that the average surface roughness of the films deposited in pure N-2 atmosphere (1.3-3.33 nm) was less than for those deposited in a mixed Ar + N-2 atmosphere (10.3-12.8 nm). Low temperature cathodoluminescence showed two emission bands centered at 2.05 eV and 3.32 eV for both types of films. (C) 2012 Elsevier B.V. All rights reserved.