A systematic study has been performed to synthesize buried homogeneous layers of beta-SiC by multiple energies (15-65 keV) of carbon ion implantations into Si(100), followed by high temperature thermal annealing. A continuous stoichiometric SiC layer of 170 nm thickness has been formed in the implanted region when the sample was annealed at 1100 degrees C for 1 h. The formation of a beta-SiC thin film has been confirmed by using X-ray diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy techniques. (c) 2012 Elsevier B.V. All rights reserved.