Polycrystalline tin-doped indium oxide (ITO) thin films were prepared by Pulsed Laser Deposition with an ITO (In2O3-10 wt.% SnO2) ceramic target and deposited on transparent borosilicate glass substrates between room temperature (RT) and 400 degrees C. The RT grown specimen was structurally investigated by Transmission Electron Microscopy, Scanning Electron Microscopy, Atomic Force Microscopy and X-Ray Diffraction. It contained both amorphous and crystalline phases. The electro-optical properties of the RT-grown sample were almost similar to those of the samples grown at higher temperatures. Finally, Scanning Transmission Electron Microscopy-Valence Electron Energy Loss Spectroscopy was used to derive locally dielectric properties which were compared with ellipsometry measurements in the 1.5-5.5 eV range using a Tauc-Lorentz model. (C) 2012 Elsevier B. V. All rights reserved.