화학공학소재연구정보센터
Thin Solid Films, Vol.529, 352-355, 2013
The effect of Sr concentration on resistive switching properties of La1-xSrxMnO3 films
La1-xSrxMnO3 (LSMO, x = 0.1, 0.3, and 0.5) thin films were prepared on Pt/Ti/SiO2/Si substrates using a radio frequency magnetron sputtering technique at a substrate temperature of 450 degrees C. The effects of Sr contents on the physical, chemical, and electrical properties of films were systematically investigated. X-ray diffraction results showed that the growth orientation and crystallinity of films were affected by Sr content. The Mn valence transition was analyzed using X-ray photoelectron spectroscopy. The conversion of Mn3+ valence to Mn4+ with increasing Sr2+ concentration generated more Mn3+-O2--Mn4+ bonds, and caused initial resistance change of LSMO films. The largest resistive switching of the La0.7Sr0.3MnO3 film having a (110) plane preferred orientation is discussed. (c) 2012 Elsevier B.V. All rights reserved.