Present work describes the synthesis of Al (Ga)-Pd-Mn quasicrystalline films via flash evaporation followed by annealing. The icosahedral quasicrystal of Al65Ga5Pd17Mn13 alloy has been used as a precursor material. An amorphous phase with very fine icosahedral grain was found in the as-deposited films of similar to 1.5 mu m thickness. After annealing at 300 degrees C for 120 h, the film completely transformed into an icosahedral phase showing micron size islands, these are precipitated on the surface of film. The X-ray diffraction and transmission electron microscopy confirms the formation of icosahedral phase. The energy dispersive X-ray analysis reveals that the final stoichiometry is maintained in the film. The formation of icosahedral Al-Ga-Pd-Mn film provides opportunities to investigate the useful properties of quasicrystals including the surface characteristics, which may well enhance the scientific interest in applied aspect of quasicrystals. (C) 2013 Elsevier B. V. All rights reserved.