화학공학소재연구정보센터
Thin Solid Films, Vol.535, 138-142, 2013
Cu(In,Ga)Se-2 absorbers from stacked nanoparticle precursor layers
The following paper presents a processing route for Cu(In,Ga)Se-2 absorber layers that is based on nanoparticle dispersions which are applied by doctor blade deposition and converted with elemental selenium vapors. In particular, the preparation of the precursor layers is investigated by systematically assessing the influence of the stacking sequence of mono-and multi-metallic layers on sintering, elemental distribution and solar cell efficiency. By applying suitable stacking sequences, precursor layers with both local Cu-rich and over-all Cu-poor stoichiometry could be prepared that allowed improved sintering properties and modifications of the gallium gradient. Despite the still prevailing porosity of the absorber layer, solar cells with efficiencies exceeding 5% could be obtained. (C) 2013 Elsevier B.V. All rights reserved.