The effect of gamma radiation on low-temperature fabricated indium-zinc-oxide (IZO) thin-film transistors (TFTs) has been investigated. A negative turn-on voltage shift and sub-threshold swing degradation are observed after irradiation with a total dose of 1.7 Mrads from Co-60. There is an increase in electron mobility from 2.8 to 8.8 cm(2)/V-s after the exposure. The changes in the electrical properties of these TFTs are attributed to the combined effects of interface states creation and electron-hole pair generation in the insulating layer. Better electrical reliability of the IZO TFTs over amorphous-silicon TFTs makes them promising candidates for space applications. (C) 2013 Published by Elsevier B.V.