The holemobility in a high Ge-content (110) SiGe inversion layer ismeasured and simulated by a split capacitance-voltage method and a quantized. (k) over right arrow . (p) over right arrow method, respectively. The calibrated model reproduces our experimental channel mobility measurements for the biaxial compressive strain SiGe on (110) substrate. We also explore the impact of external mechanical uniaxial stress on the SiGe (110) p-channel metal oxide semiconductor field effect transistor (PMOSFET). We obtained the corresponding piezoresistance coefficients of the SiGe (110) PMOSFET with external mechanical uniaxial stress parallel and perpendicular to the channel direction. Our study shows the effectiveness in combining external mechanical uniaxial stress and intrinsic biaxial compressive strain for the SiGe (110) PMOSFET. Crown Copyright (C) 2013 Published by Elsevier B. V. All rights reserved.