Supercritical carbon dioxide (CO2) fluid has been used as a reaction media to deposit copper into porous silicon (PS). The deposited layers were investigated in terms of the field emission scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. Continuous filling of the PS pores with pure copper was achieved down to a depth of about 1 mu m. The deposition was confirmed by the observation of improved current- potential curves in the resulting PS/Cu junctions, compared to a reference device (electrode deposited by sputtering). This technique of metal deposition into PS has remarkable advantages compared to the conventional electrochemical technique due to its wide tunability. (C) 2013 Elsevier B.V. All rights reserved.