The effects of the oxidation of Si1 - xCx films (x = 0.0125) on Si (100) substrates were evaluated. Epitaxial Si1 - xCx (x = 0.0125) films were deposited by ultrahigh-vacuum chemical vapor deposition at 600 degrees C. Oxidation at 800 degrees C and 900 degrees C under an O-2 ambient in a tube furnace resulted in a decrease in substitutional C concentration, due to the formation of interstitial carbon or beta-SiC precipitation. Transmission electron microscopy analyses indicated that the formation of beta-SiC on the Si1 - C-x(x) layer occurred when the oxidation temperature exceeded 900 degrees C. This indicates that relaxation of compressive stress in the depth direction occurred as the result of the formation of beta-SiC. No evidence was found for the segregation of carbon at the top of the Si1 - C-x(x) layers during the oxidation of the Si1 - C-x(x) layer unlike the Ge pile up that occurs during the oxidation of Si1 - Ge-x(x) layers. (C) 2013 Elsevier B. V. All rights reserved.