Sn doped GaSb has been grown at 260 degrees C by liquid phase epitaxy. The experiments were done so as to determine if Sn could change its impurity type, from acceptor to donor, at such low growth temperature. It was found that Sn behaves as an acceptor irrespective of the growth temperature or the Sn concentration in the nutrient liquid. The samples were studied by photoluminescence and secondary ion mass spectroscopy. From these experiments the segregation coefficient of Sn in the Ga-Sb-Sn system at 260 degrees C has been measured. Also the activation energy of the Sn acceptor level was determined at 20 K. (C) 2013 Elsevier B. V. All rights reserved.