Thin Solid Films, Vol.548, 225-229, 2013
Thermal conductivity of amorphous thin-film Al-P-O on silicon
The thermal conductivity, measured by the 3 omega method, of amorphous films of Al2P1.2O6 (AlPO) deposited on Si substrates by an all-aqueous spin-coating technique is 0.93(3) W m(-1) K-1. The thermal conductivity of a degenerately doped n-Si substrate is 85(5) W m(-1)K(-1) and of a more lightly doped p-Si substrate is 139(7) W m(-1)K(-1). The AlPO thermal conductivity is independent of film thickness in the range 45-200nm. The total thermal resistance is dominated by the film contribution for film thicknesses above 50nm, and for smaller thicknesses, interface contributions become significant. (C) 2013 Elsevier B. V. All rights reserved.
Keywords:Thermal conductivity;Interface resistance;3-Omega method;Amorphous dielectric;Thin-film;AlPO;Solution processes