Multilayered Al/Cu/Fe thin films with composition close to the quasicrystalline phase have been prepared by magnetron sputtering. Annealing at 600 degrees C yields a homogeneous film of the cubic alpha-approximant phase by Si substrate diffusion, which prevents the formation of the quasicrystalline phase. After 4 h annealing the film contained 8 at.% Si, which corresponds to the expected value of the a-approximant. The amount of Si in the films was found to slowly increase to similar to 12 at.% during continued annealing (64 h) while the a-approximant phase was retained. The lattice parameter was found to continuously decrease as Al became substituted with Si. The film is observed to be polycrystalline with individual grains being strained in varying magnitude, and with no preferential orientation relationship to the substrate or each other. (C) 2013 Elsevier B. V. All rights reserved.