Well defined regions of silicon suboxide (SiOx) thin films deposited on fused silica substrates by vacuum-evaporation are transferred to a receiver substrate by pulsed laser induced forward transfer. The receiver substrate (fused silica, polycarbonate or polydimethylsiloxane) is pressed against the coated donor substrate, and the SiOx (x approximate to 1) coating is irradiated through the donor substrate with a single excimer laser pulse. The irradiated area is defined by the projection of a mask, which is illuminated by the laser. Films with thickness ranging from 200 nm to 800 nm have been transferred this way. The process is a congruent transfer, i.e. the shape of the deposited film pad corresponds exactly to the ablated film area defined by the mask. Accurate edges without melt rims can be obtained at a laser fluence of about 500 mJ/cm(2). (C) 2013 Elsevier B.V. All rights reserved.