In this study, the feasibility of using a photoconductor with a Ga2O3/CuGaSe2 heterojunction for visible light sensors was investigated. We propose a hole-blocking structure using gallium oxide (Ga2O3) for CuIn1 (-) xGaxSe1 - ySy (CIGS) thin film to reduce dark current. Experimental results showed that this structure drastically reduced the dark current. Then, avalanche multiplication phenomenon was observed at an applied voltage of over 6 V. However, this structure had sensitivity only in the ultraviolet light region. It seemed the depletion region in the heterojunction spread almost completely in the Ga2O3 layer but not in the CIGS layer because the carrier density of the non-doped Ga2O3 layer was much lower than that of the CIGS layer. We therefore used tin-doped Ga2O3 (Ga2O3:Sn) for the n-type layer to increase carrier density. As a result, the depletion region shifted to the CIGS film and the cells had sensitivity in all visible regions. These results indicate that the Ga2O3:Sn/CuGaSe2 heterojunction is feasible for visible light photoconductors. (C) 2013 Elsevier B.V. All rights reserved.