A process for deposition of Cu2ZnSnS4 (CZTS) films using replacement of Zn2+ in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6 nm. The direct band gap of CZTS films as elucidated by UV-Vis-NIR spectroscopy is 1.45 eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6 S/cm. The hole concentration and hole mobility is determined to be 3.6 x 10(17) cm(-3) and 1.4 cm(2)V(-1) s(-1) respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO2:In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521 mV and 19.13 mA/cm(2), respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region. (C) 2013 Elsevier B.V. All rights reserved.