The solid state reaction between 30 nmPd films and various Ge substrates (Ge(100), Ge(111), polycrystalline Ge and amorphous Ge) was studied by means of in situ X-ray diffraction and in situ sheet resistance measurements. The reported phase sequence of Pd2Ge followed by PdGe was verified on all substrates. The texture of the germanides was analysed by pole figure measurements on samples quenched in the Pd2Ge and in the PdGe phase on both Ge(100) and (111) substrates. We report an epitaxial growth of Pd2Ge on Ge(111) and on Ge(100). The formed PdGe has an axiotaxial alignment on Ge(111). On Ge(100), the axiotaxial texture is observed together with a fibre texture. The higher formation temperature of PdGe on Ge(111) could be related to the epitaxial alignment of the Pd2Ge parent phase on Ge(111). (C) 2013 Elsevier B.V. All rights reserved.