Thin Solid Films, Vol.553, 67-70, 2014
Doping effects on growth and properties of oxygen deficient Ga oxide films
The effects of Sn or In doping on the growth of oxygen deficient Ga oxide have been studied. Like in the case of pure oxygen deficient Ga oxide, nanocomposite films are formed with metallic (Ga and Sn or Ga and In) clusters embedded in a stoichiometric oxide matrix. The synthesis of such clusters is related to the difference in the free energy of formation of the various oxides which leads to the phase separation with formation of metallic clusters. The superconducting transition in the Ga and In clusters was observed as well as their melting and freezing transitions during thermal cycling. This chemically driven phase separation appears as a possible approach for the formation of nanocomposite films with particular transport properties (conductivity). (C) 2013 Elsevier B. V. All rights reserved.
Keywords:Gallium oxide;Nanocomposite oxide films;Phase separation;Oxygen deficiency;Pulsed laser deposition