Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were -14 T < B < + 14 T and 1.5 K < T < 300 K respectively. Using maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis, a RT two dimensional hole gas drift mobility of (3.9 +/- 0.4) x 10(3) cm(2)/V s was determined for a sheet density (p(s)) 9.8 x 10(10) cm(-2) (by ME-MSA) and (3.9 +/- 0.2) x 10(3) cm(2)/V s for a sheet density (p(s)) 5.9 x 10(10) cm(-2) (by BAMS). (C) 2013 The Authors. Published by Elsevier B.V.