This paper deals with the properties of the glasses and thin films from multi-component chalcogenide prepared by co-evaporation technique. The thin chalcogenide layers from GeS2-In2S3 system were deposited by thermal co-evaporation of GeS2 and In2S3. Using X-ray microanalysis it was found that the film compositions are closed to the expected ones. X-ray diffraction analysis shows that the thin films deposited by co-evaporation are amorphous. The refractive index, n and the optical band gap, E-g(opt) were calculated from the transmittance and reflectance spectra. The thin film's structure was investigated by infrared spectroscopy. It was found that the photoinduced optical changes decrease with increase of indium content while significant thermo-induced changes in the optical properties and structure were observed at 14 at.% indium. The infrared spectra demonstrated high transmittance of the thin films in the range 4000-500 cm(-1). The far-infrared spectra indicated that the indium participates in the glass network of the layers from Ge-S-In system in four coordinated InS4/2- tetrahedral and six-coordinated InS6/23- octahedral units. The changes in infrared spectra after annealing of the thin films evidence an increase of population of ethane-like S3Ge-GeS3 units and/or structural or phase change of indium contain units. (C) 2014 Elsevier B. V. All rights reserved.