Thin films of TiO2 were deposited by reactive sputtering of a Ti target on unheated substrates and post-heated at 300 C and 500 C. They exhibit a granular structure. Direct current-sputtered films are amorphous as-deposited and crystallize (to pure anatase) only at 500 degrees C. Radio-frequency (rf)-sputtered films are already crystalline (pure anatase) as-deposited on unheated substrates. Above a thickness of 100 nm, the crystallite size, as deduced from the half-width of X-ray diffraction (XRD) peaks, is constant at 35 nm and decreases to zero when the thickness decreases to 25 nm. Below a thickness of 25 nm, the films are X-ray amorphous. Height and half-width of the XRD peaks of rf-sputtered films do not change upon post-heating at 300 or 500 C. A larger lattice parameter ratio c/alpha is observed with respect to the bulk value that decreases with increasing film thickness and is about 1% larger for a film thickness larger than 100 nm. (C) 2014 Published by Elsevier B. V.