Indium tin oxide (ITO) and Ga-doped ITO (ITO: Ga) films were deposited on glass and polyimide (PI) substrates by direct current (DC) magnetron sputtering using different ITO: Ga targets (doped-Ga: 0, 0.1 and 2.9wt.%). The films were deposited with a thickness of 50 nm and then post-annealed at various temperatures (room temperature-250 degrees C) in a vacuum chamber for 30 min. The amorphous ITO: Ga (0.1 wt.% Ga) films post-annealed at 220 degrees C exhibited relatively low resistivity (4.622 Chi 10(-4) Omega cm), indicating that the crystallinity of the ITO: Ga films decreased with increasing Ga content. In addition, the amorphous ITO: Ga films showed a better surface morphology, etchability and mechanical properties than the ITO films. (C) 2013 Elsevier B. V. All rights reserved.