Zinc telluride (ZnTe) thin films are prepared potentiostatically from an aqueous solution bath containing ZnCl2, TeCl4 and LiCl on Fluorine Tin Oxide coated glass substrate to investigate its suitability as a material for solar cell technology. The appropriate potential region where formation of stoichiometric ZnTe semiconductor occurs is found to be close to -0.85 V versus Ag/AgCl. X-ray diffraction results have indicated that all electrodeposited films have cubic structure. Quantitative analysis of energy dispersive X-ray analysis results has shown that the composition ratio (Zn:Te) of films is around (1:0.99). A direct energy gap of 2.19 eV is determined by NIR-Vis-UV spectroscopy. The effect of annealing on the crystallinity and optical properties has been reported. Impedance measurements have revealed that all grown films present a p-type electrical conductivity with acceptor density N-A = 2.16 x 10(19) cm(-3). Furthermore, the impedance results are adjusted to an equivalent circuit having two capacitors in series (Helmholtz, C-H and space charge, C-SC) and two resistances R-CT and R-SC, which are associated with charge transfer processes. (C) 2014 Elsevier B.V. All rights reserved.