쇼키컨텍에 의한 박막형 트랜지스터의 전기적 특성

오데레사; Teresa Oh

Korean Journal of Materials Research, Vol.24, No.3, 135-139, March, 2014

DOI10.3740/MRSK.2014.24.3.135 Export Citation

쇼키컨텍에 의한 박막형 트랜지스터의 전기적 특성

Electrical Characteristics of Thin Film Transistor According to the Schottky Contacts

오데레사^†

청주대학교 반도체공학과

Teresa Oh^†

Department of Semiconductor Engineering, Cheongju University, Cheongju 360-764, Korea

E-mail:

To obtain the transistor with ambipolar transfer characteristics, IGZO/SiOC thin film transistor was prepared on SiOC with various polarities as a gate insulator. The interface between a channel and insulator showed the Ohmic and Schottky contacts in the bias field of .5V ~ +5V. These contact characteristics depended on the polarities of SiOC gate insulators. The transfer characteristics of TFTs were observed the Ohmic contact on SiOC with polarity, but Schottky contact on SiOC with low polarity. The IGZO/SiOC thin film transistor with a Schottky contact in a short range bias electric field exhibited ambipolar transfer characteristics, but that with Ohmic contact in a short range electric field showed unipolar characteristics by the trapping phenomenon due to the trapped ionized defect formation.

Keywords:IGZO;Schottky contact;polarity;thin film transistor;gate insulator

[References]

Tsao SW, Chang TC, Huang SY, Chen MC, Chen SC, Tsai CT, Kuo YJ, Chen YC, Wu WC, Solid-State Electron., 54(12), 1497 (2010)
Oh T, Korean J. Mater. Res., 23(10), 580 (2013)
Akasaka S, Tamura K, Nakahara K, Tanabe T, Kamisawa A, Kawasaki1 M, Appl. Phys. Lett., 93, 123309 (2008)
Nomura K, et al., Appl. Phys. Lett., 93, 192107 (2008)
Mao Q, Ji Z, XI J, IOP J. Phys. D : Appl. Phys, 43(39), 395104 (2010)
Chang SP, et al., Appl. Phys. Lett., 92, 192104 (2008)
Chen WT, et al., IEEE Electron. Dev. Lett., 32, 1552 (2011)
Kamiy T, Nomura T, K, Hosono, Technol H, Adv. Mater., 11, 044305 (2010)
Mitrofanov O, Mantra M, J. Appl. Phys., 95, 6414 (2004)
Maserjian J, Zamani N, Appl. Phys. Lett., 53, 559 (1982)
Suresh A, Muth JF, Appl. Phys. Lett., 92, 033502 (2008)
Ganichev SD, et al., Phys. Rev B, 61(48), 10361 (2000)
SIMMONS JG, Phys. Rev., 155, 657 (1967)
Maserjian J, Vac J, Sci. Technol., 11, 996 (1974)
Oh T, Kim CH, IEEE Trans. Plasma Science, 38, 1598 (2010)
Oh T, Kim KS, Lee KM, Choi CK, Jpn. J. Appl. Phys., 44, 1409 (2005)

[Referenced By]

[1] Tsao SW, Chang TC, Huang SY, Chen MC, Chen SC, Tsai CT, Kuo YJ, Chen YC, Wu WC, Solid-State Electron., 54(12), 1497 (2010)

[2] Oh T, Korean J. Mater. Res., 23(10), 580 (2013)

[3] Akasaka S, Tamura K, Nakahara K, Tanabe T, Kamisawa A, Kawasaki1 M, Appl. Phys. Lett., 93, 123309 (2008)

[4] Nomura K, et al., Appl. Phys. Lett., 93, 192107 (2008)

[5] Mao Q, Ji Z, XI J, IOP J. Phys. D : Appl. Phys, 43(39), 395104 (2010)

[6] Chang SP, et al., Appl. Phys. Lett., 92, 192104 (2008)

[7] Chen WT, et al., IEEE Electron. Dev. Lett., 32, 1552 (2011)

[8] Kamiy T, Nomura T, K, Hosono, Technol H, Adv. Mater., 11, 044305 (2010)

[9] Mitrofanov O, Mantra M, J. Appl. Phys., 95, 6414 (2004)

[10] Maserjian J, Zamani N, Appl. Phys. Lett., 53, 559 (1982)

[11] Suresh A, Muth JF, Appl. Phys. Lett., 92, 033502 (2008)

[12] Ganichev SD, et al., Phys. Rev B, 61(48), 10361 (2000)

[13] SIMMONS JG, Phys. Rev., 155, 657 (1967)

[14] Maserjian J, Vac J, Sci. Technol., 11, 996 (1974)

[15] Oh T, Kim CH, IEEE Trans. Plasma Science, 38, 1598 (2010)

[16] Oh T, Kim KS, Lee KM, Choi CK, Jpn. J. Appl. Phys., 44, 1409 (2005)