Sb/Bi비에 따른 5원계 바리스터의 소결거동 및 전기적 특성(I) : ZnO-Bi2O3-Sb2O3-Mn3O4-Cr2O3

홍연우; 이영진; 김세기; 김진호; Youn-Woo Hong; Young-Jin Lee; Sei-Ki Kim; Jin-Ho Kim

Korean Journal of Materials Research, Vol.22, No.12, 675-681, December, 2012

DOI10.3740/MRSK.2012.22.12.675 Export Citation

Sb/Bi비에 따른 5원계 바리스터의 소결거동 및 전기적 특성(I) : ZnO-Bi2O3-Sb2O3-Mn3O4-Cr2O3

Sintering and Electrical Properties According to Sb/Bi Ratio(I) : ZnO-Bi2O3-Sb2O3-Mn3O4-Cr2O3 Varistor

홍연우^†, 이영진, 김세기, 김진호¹

한국세라믹기술원 전자소재융합본부
¹경북대학교 신소재공학부

Youn-Woo Hong^†, Young-Jin Lee, Sei-Ki Kim, and Jin-Ho Kim¹

Electronic Materials Convergence Division, KICET, Seoul 153-801, Korea
¹School of Materials Science and Engineering, Kyungpook National University, Daegu 702-701, Korea

E-mail:

We aimed to examine the co-doping effects of 1/6 mol% Mn3O4 and 1/4 mol% Cr2O3 (Mn:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and grain boundary properties, of ZnO-Bi2O3-Sb2O3 (ZBS;Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Cr-doped ZBS, ZBS(MnCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore (Zn2Bi3Sb3O14), α-spinel (Zn7Sb2O12), and δ-Bi2O3 (also β-Bi2O3 at Sb/Bi ≤ 1.0) were detected for all of the systems. Mn and Cr are involved in the development of each phase. Pyrochlore was decomposed and promoted densification at lower temperature on heating in Sb/Bi = 1.0 system by Mn rather than Cr doping. A more homogeneous microstructure was obtained in all systems affected by α-spinel. In ZBS(MnCr), the varistor characteristics were improved dramatically (non-linear coefficient, α = 40~78), and seemed to form Vo .(0.33 eV) as a dominant defect. From impedance and modulus spectroscopy, the grain boundaries can be seen to have divided into two types, i.e. one is tentatively assigned to ZnO/Bi2O3 (Mn,Cr)/ZnO (0.64~1.1 eV) and the other is assigned to the ZnO/ZnO (1.0~1.3 eV) homojunction.

Keywords:ZnO varistor;electrical properties;Mn3O4;Cr2O3;sintering

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[2] Eda K, IEEE Electr. Insul. Mag., 5(6), 28 (1989)

[3] Einzinger R, Annu. Rev. Mater. Sci., 17, 299 (1987)

[4] Greuter F, Blatter G, Semicond. Sci. Technol., 5, 111 (1990)

[5] Inada M, Matsuoka K, Advances in Ceramics; Vol. 7, p.91, edited by Yan MF, Heuer AH, American Ceramic Society, Columbus, OH, USA (1984). (1984)

[6] Kim J, Kimura T, Yamaguchi T, J. Am. Ceram. Soc., 72, 1390 (1989)

[7] Hong YW, Kim JH, J. Kor. Ceram. Soc., 37, 651 (2000)

[8] Hong YW, Shin HS, Yeo DH, Kim JH, Kim JH, J. KIEEME, 21, 738 (2008)

[9] Karanovic L , Poleti D, Vasovic D, Mater. Lett., 18, 191 (1994)

[10] Mergen A, Lee WE, J. Eur. Ceram. Soc., 17, 1049 (1997)

[11] Brankovic Z, Brankovic G, Poleti D, Varela JA, Ceram. Int., 27, 115 (2001)

[12] Hong YW, Shin HS, Yeo DH, Kim JH, J. KIEEME, 23, 942 (2010)

[13] West AR, Andres-Verges M, J. Electroceram., 1, 125 (1997)

[14] Abdullah KA, Bui A, Loubiere A, J. Appl. Phys., 69, 4046 (1991)

[15] Hodge IM, Ingram MD, West AR, J. Electroanal. Chem., 74, 125 (1976)

[16] Gerhardt R, J. Phys. Chem. Solids, 55, 1491 (1994)

[17] Hong YW, Shin HS, Yeo DH, Kim JH, Kim JH, J. KIEEME, 22, 941 (2009)

[18] Hong YW, Shin HS, Yeo DH, Kim JH, J. KIEEME, 24, 969 (2011)

[19] Hong YW, Kim JH, Ceram. Int., 30, 1307 (2004)

[20] Chiou BS, Chung MC, J. Electron. Mater., 20, 885 (1991)

[21] Bueno PR, Varela JA, Longo E, J. Eur. Ceram. Soc., 28, 505 (2008)