열처리와 In 중간층 적용에 의한 CBD-In2S3/CIGS 태양전지의 특성 향상

김희섭; 김지혜; 신동협; 안병태; Hee Seop Kim; Ji Hye Kim; Dong Hyeop Shin; Byung Tae Ahn

Korean Journal of Materials Research, Vol.21, No.8, 432-438, August, 2011

DOI10.3740/MRSK.2011.21.8.432 Export Citation

열처리와 In 중간층 적용에 의한 CBD-In2S3/CIGS 태양전지의 특성 향상

Annealing and In Interlayer Effects on the Photovoltaic Properties of CBD-In2S3/CIGS Solar Cells

김희섭, 김지혜, 신동협, 안병태^†

한국과학기술원 신소재공학과

Hee Seop Kim, Ji Hye Kim, Dong Hyeop Shin, and Byung Tae Ahn^†

Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea

E-mail:

In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the In2S3/CIGS solar cell dramatically improved when the films were annealed at 300oC in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the In2S3/CIGS interface. The In2S3/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the Jsc and FF values. Furthermore, the In2S3/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.

Keywords:CIGS Solar Cell;CBD;In2S3;Annealing;In interlayer

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[2] Kemell M, Ritala M, Leskela M, Crit. Rev. Solid State Mater. Sci., 30, 1 (2005)

[3] Nakada T, Mizutani M, Jpn. J. Appl. Phys., 41, L165 (2002)

[4] Ennaoui A, Siebentritt S, Lux-Steiner MC, Riedl W, Karg F, Sol. Energy Mater. Sol. Cells, 67(1-4), 31 (2001)

[5] Naghavi N, Henriquez R, Laptev V, Lincot D, Appl. Surf. Sci., 222(1-4), 65 (2004)

[6] Bayon R, Guillen C, Martinez MA, Gutierrez MT, Herrero J, J. Electrochem. Soc., 145(8), 2775 (1998)

[7] Larina L, Kim KH, Yoon KH, Konagai M, Ahn BT, J. Electrochem. Soc., 151(2), C789 (2004)

[8] Barreau N, Marsillac S, Albertini D, Bernede JC, Thin Solid Films, 403-404, 331 (2002)

[9] Lokhande CD, Ennaoui A, Patil PS, Giersig M, Diesner K, Muller M, Tributsch H, Thin Solid Films, 340(1-2), 18 (1999)

[10] Hariskos D, Ruckh M, Ruhle U, Walter T, Shock HW, Hedstrom J, Stolt L, Sol. Energ. Mater. Sol. Cell., 41-42, 345 (1996)

[11] Moulder JF, Stickle WF, Sobol PE, Bomben KD, Handbook of X-ray Photoelectron Spectroscopy, ed. Castain J, King RC, Physical Electronics Inc., Eden Prairie, MN, USA (1995). (1995)

[12] Weiher RL, Ley RP, J. Appl. Phys., 37, 299 (1966)

[13] Rousset J, Donsanti F, Genevee P, Renou G, Lincot D, Sol. Energy Mater. Sol. Cells, 95(6), 1544 (2011)

[14] Kwon SH, Ahn BT, Kim SK, Yoon KH, Song J, Thin Solid Films, 323(1-2), 265 (1998)